| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| LTC7003IMSE | ADI/亚德诺 |
MSOP16 |
2131+ |
1600 |
||||
| FAN7380MX | 其他被动元件 |
ONSEMI/安森美 |
SOP-8 |
2102+2105+ |
42690 |
|||
| K4B2G0846F-BCMA | 存储IC |
SAMSUNG/三星 |
BGA |
1825+1828+ |
16000 |
|||
| ADXRS453BEYZ-RL | IC |
ADI/亚德诺 |
CLCC14 |
24+ |
500 |
|||
| MCIMX257DJM4A | IC |
NXP/恩智浦 |
BGA |
22+ |
1800 |
|||
| S912ZVC64AMLFR | IC |
NXP/恩智浦 |
LQFP-48 |
2321 |
10000 |
|||
| IS43QR16256B-083RBLI | IC |
ISSI/芯成 |
BGA96 |
22+ |
5000 |
|||
| VND5T035LAKTR-E | IC |
ST/意法 |
HSSOP24 |
22+23+ |
1000000 |
|||
| 88E1510-A0-NNB2C000 | MAVALL |
1428 |
870 |
|||||
| AD9246BCPZ-125 | 转换器IC |
ADI/亚德诺 |
LFCSP48 |
2050+ |
113 |
|||
| STM32H750IBK6 | ST/意法 |
LQFP64 |
23+ |
2016 |
||||
| STP10NK60ZFP | MOS(场效应管) |
ST/意法 |
TO-220 |
1228 |
45150 |
|||
| AFE4490RHAR | 贴片二极管 |
TI/德州仪器 |
VQFN40 |
2048 |
5000 |
|||
| XC5VLX50T-1FFG665I | IC |
XILINX/赛灵思 |
BGA665 |
2029 |
2026 |
|||
| K4B2G0846F-BCMA | 存储IC |
SAMSUNG/三星 |
BGA |
1828+ |
24000 |
|||
| L5973D013TR | 电源IC |
ST/意法 |
SOP8 |
21+ |
50000 |
|||
| IRFP4568PBF | MOSFET或IGBT开关IC |
INFINEON/英飞凌 |
TO247AC |
2210+ |
4376 |
|||
| NST1001-QDNR | IC |
NOVOSENSE/纳芯微 |
DFN-2L |
2351 |
1262 |
|||
| 25LC256T-E/SN16KVAO | IC |
MICROCHIP/微芯 |
SOP-8 |
23+ |
6600 |
|||
| VND5T050AKTR-E | IC |
ST/意法 |
HSSOP24 |
22+23+ |
20000 |
|||
| R5F10268ASP#55 | IC |
RENESAS/瑞萨 |
LSSOP20 |
21+ |
4000 |
|||
| AFE4490RHAR | 贴片二极管 |
TI/德州仪器 |
VQFN40 |
2048 |
2500 |
|||
| BTB08-700TWRG | ST/意法 |
TO-220 |
2010+ |
42000 |
||||
| K4B2G0846F-BCMA | 存储IC |
SAMSUNG/三星 |
BGA |
1825+1828+ |
16000 |
|||
| LRMAP2512-R10FT4 | IRC |
2512 |
240000 |
|||||
| IRFP4568PBF | 低压MOS管 |
INFINEON/英飞凌 |
TO247AC |
2210+ |
4376 |
|||
| ADXRS453BRGZ | IC |
ADI/亚德诺 |
SOIC-16 |
24+ |
300 |
|||
| 12CWQ03FNTRPBF | INFINEON/英飞凌 |
TO-252 |
2006+ |
34000 |
||||
| MX25L51245GZ2I-10G | IC |
MXIC/旺宏 |
WSON8 |
21+ |
12000 |
|||
| INA213CQDCKRQ1 | IC |
TI/德州仪器 |
SC70-6 |
22+ |
32500 |